PowerElectronicDevice, also known as power semiconductor device, is mainly used in high-power electronic devices for power conversion and control circuits of power equipment (usually refers to currents of tens to thousands of amps and voltages of hundreds of volts or more).
Power semiconductor device classificationClassified according to the extent to which power electronics can be controlled by control circuit signals:
1. Half-controlled devices, such as thyristors;
2. Fully controlled devices such as GTO (gate turn-off thyristor), GTR (power transistor), MOSFET (power field effect transistor), IGBT (insulated gate bipolar transistor);
3. Uncontrollable devices, such as power diodes;
According to the nature of the signal between the control circuit and the common terminal of the power electronics device:
1. Voltage-driven devices such as IGBTs, MOSFETs, SITH (Static Induction Thyristors);
2. Current-driven devices such as thyristors, GTOs, GTRs;
According to the effective signal waveform classification of the driving circuit between the control terminal and the common terminal of the power electronic device:
1. Pulse trigger type, such as thyristor, GTO;
2. Electronically controlled type, such as GTR, MOSFET, IGBT;
Classification according to the case where two carriers of electrons and holes in the power electronic device participate in conduction:
1. Bipolar devices, such as power diodes, thyristors, GTOs, GTRs;
2. Unipolar devices such as MOSFETs, SITs;
3. Composite devices such as MCT (MOS Control Thyristor), IGBT, SITH and IGCT;
Power diode: simple structure and principle, reliable operation;
Thyristors: withstand voltage and current capacity up to highest in all devices
IGBT: high switching speed, low switching loss, resistance to pulse current surge, low on-state voltage drop, high input impedance, voltage drive, low drive power; disadvantages: switching speed is lower than power MOSFET, voltage, current capacity Less than GTO
GTR: high withstand voltage, large current, good switching characteristics, strong flow capacity, and reduced saturation pressure. Disadvantages: low switching speed, current drive, large driving power, complex drive circuit, and secondary breakdown.
GTO: large voltage and current capacity, suitable for high power applications, with conductance modulation effect, its flow capacity is very strong; Disadvantages: low current turn-off gain, large gate negative pulse current when off, low switching speed, drive High power, complex drive circuit, low switching frequency
MOSFET: fast switching speed, high input impedance, good thermal stability, low required driving power, simple driving circuit, high operating frequency, no secondary breakdown problem; disadvantages: low current capacity, low withstand voltage, generally only applicable Power electronic devices with a power not exceeding 10 kW.
Constraints: withstand voltage, current capacity, speed of the switch.
1, high voltage thyristor
2. igbt and fast switching diodes for future energy conversion
3. Ultra-high speed switching device using super junction technology
4, sic components applied to high-power power supplies
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